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Improvement of characteristics
of CVD graphene electronic device using passivation layer

  • Depositing Al₂O₃ on graphene using low-temperature atomic layer deposition (ALD) : cut off contact with atmospheric gases


  • When the graphene electronic device operates, moisture in the air receives electrons from the graphene surface and causes an oxidation-reduction reaction, and the Al₂0₃ protective layer prevents this phenomenon. Therefore, the original operating characteristics of the device can be secured.
  1. Raman spectra of the single-layer CVD graphene used in this work.
    Inset is optical image of single-layer graphene (scale bar is 50㎛)
  2. Schematics of Al₂O₃-passivated graphene FET device structure.
  3. SEM image of graphene FET device set.
  4. SEM image of graphene channel region (magnification of circled region in (c).

[ Measurement result ]


[ Analysis ]


Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors

C.G. Kang, et al., Carbon, 53, 2013, p.182


Development of characteristic analysis model  for CVD graphene electronic device

Two trap model : 
Physical mechanisms affecting the hsteretic behavior of graphene devices. Black dashed lines in Al₂O₃ layer represent the grain boundary. Lower schematic is a magnification of red circled region in the upper schematic, showing the mechanism of charge trapping at the top and bottom interface of graphene. The gap at the interface is exaggerated to emphasize the role of trapped air molecules.
(For interpretation of the references to colour in this figure legend, the reader is referred to the web version of this article.)


Development of characteristic analysis model 
for CVD graphene electronic device

Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I-V method

Y.G. Lee, et al., Carbon, 60, 2013, p.453


Stabilization of device characteristics
using standard process technology

Schematic diagram of back-gated graphene FET device fabrication

(Heat treatment for stabilization of device characteristics at each stage of the process)



Comparison of final device characteristics
according to heat treatment


Verification of long-term operation stability of
a device manufactured using a standard process


Comparison of final device characteristics according to heat treatment


Verification of long-term operation stability of
a device manufactured using a standard process

A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors 

Y.J. Kim, et al., Nanoscale, 7, 2015, p.4013

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Alpha Graphene Inc.

#403, Business Innovation Center for Advanced Technology, 77,

Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do, Republic of Korea


TEL  +82-54-727-0822

FAX  +82-54-279-5029

Support@alphagraphene.com


ⓒ 2023 ALPHAGRAPHENE. All Rights Reserved.