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Foundry service : graphene electronics

Size : 2~8 inch wafer with custom designs

Foundry service : graphene electronics

Size : 2~8 inch wafer with custom designs

Based on 4-inch wafer product

Foundry service of 4-inch wafer

(Graphene electronic device manufacturing)

Based on 4-inch wafer product

Foundry service of 4-inch wafer

(Graphene electronic device manufacturing)

Information of foundry service

Fabrication of electrical device

Fabrication processes for semiconductor devices
Substrate sizeUnder 6 inch wafer
EquipmentPhotolithography ( resolution > 3um), RIE,
ALD, e-beam & thermal evaporator, Sputter,
RTA, high vacuum annealing , UV treatment

Information of substrate

Substrate

Customized various substrate

(Need agreements for process development and results)

Reference

  • S.Lee†, S.K.Lee†, et al., “Graphene transfer in vacuum yielding a high quality graphene”, Carbon, 93, 2015, p.286-294.
  • S.K.Lee, Y.J.Kim, et al., “Advantages of a buried-gate structure for graphene field-effect transistor”, Semiconductor Science and Technology, Accepted, 2019.
  • S.K.Lee, Y.J.Kim and B.H.Lee*, "Study on future electronic device using graphene", Vacuum Magazine, 2016.
  • T.J.Yoo, Y.J.Kim, S.K.Lee, et al., Zero-bias operation of CVD graphene photodetector with asymmetric metal contacts", on-line published, ACS Photonics, 2018.
  • H.J.Hwang, S.K.Lee, et al., “Graphene barristor using nitrogen profile controlled ZnO Schottky contacts", Nanoscale, 9, p.2442, 2017.
  • Y.J.Kim, S.K.Lee, et al., "Demonstration of Complimentary Ternary Graphene Field Effect Transistors ", Scientific Reports, 6, p.39393, 2016.

[ Buried-gate GFET ]

[ Top-gate GFET ]

[ Buried-gate GFET ]

[ Top-gate GFET ]

Example : Buried gate device
fabrication processes

➊Substrate preparation

➋SiO₂ dry etch by RIE

➌Metal deposition & lift-off

➍CMP (surface planarization)

➎Gate dielectric deposition

❻Graphene transfer

❼Graphene patterning

❽Electrode metal deposition & patterning

❾Dielectric deposition for Passivation

More

Example : Top gate device
fabrication processes

➊Substrate preparation

➋Graphene transfer

➌Electrode metal deposition & patterning

➍Gate dielectric deposition

➎Gate metal deposition & patterning

More

Various types of electronic devices and sensors 
(SEM image, in house data) 

Photo detector :
improved photo responsiveness (blue) 


Carbon, Graphene transfer in vacuum yielding a high quality graphene, 93, 2015.

Alpha Graphene Inc.

#403, Business Innovation Center for Advanced Technology, 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do, Republic of Korea


TEL  +82-54-727-0822

FAX  +82-54-279-5029

Support@alphagraphene.com

ⓒ 2023 ALPHAGRAPHENE. All Rights Reserved.

Alpha Graphene Inc.

#403, Business Innovation Center for Advanced Technology, 

80, Jigok-ro 127 beon-gil , Nam-gu, Pohang-si, Gyeongsangbuk-do, Republic of Korea, 37673


TEL  +82-54-727-0822

FAX  +82-54-279-5029

Support@alphagraphene.com

ⓒ 2023 ALPHAGRAPHENE. All Rights Reserved.