Foundry service : graphene electronics

Size : 2~8 inch wafer with custom designs

Foundry service : graphene electronics

Size : 2~8 inch wafer with custom designs

Based on 4-inch wafer product

Foundry service of 4-inch wafer

(Graphene electronic device manufacturing)

Based on 4-inch wafer product

Foundry service of 4-inch wafer

(Graphene electronic device manufacturing)

Information of foundry service


Fabrication of electrical device

Fabrication processes for semiconductor devices
Substrate sizeUnder 6 inch wafer
EquipmentPhotolithography ( resolution > 3um), RIE,
ALD, e-beam & thermal evaporator, Sputter,
RTA, high vacuum annealing , UV treatment

Information of substrate


Substrate

Customized various substrate

(Need agreements for process development and results)

Reference

  • S.Lee†, S.K.Lee†, et al., “Graphene transfer in vacuum yielding a high quality graphene”, Carbon, 93, 2015, p.286-294.
  • S.K.Lee, Y.J.Kim, et al., “Advantages of a buried-gate structure for graphene field-effect transistor”, Semiconductor Science and Technology, Accepted, 2019.
  • S.K.Lee, Y.J.Kim and B.H.Lee*, "Study on future electronic device using graphene", Vacuum Magazine, 2016.
  • T.J.Yoo, Y.J.Kim, S.K.Lee, et al., Zero-bias operation of CVD graphene photodetector with asymmetric metal contacts", on-line published, ACS Photonics, 2018.
  • H.J.Hwang, S.K.Lee, et al., “Graphene barristor using nitrogen profile controlled ZnO Schottky contacts", Nanoscale, 9, p.2442, 2017.
  • Y.J.Kim, S.K.Lee, et al., "Demonstration of Complimentary Ternary Graphene Field Effect Transistors ", Scientific Reports, 6, p.39393, 2016.

[ Buried-gate GFET ]

[ Top-gate GFET ]

[ Buried-gate GFET ]

[ Top-gate GFET ]

Example : Buried gate device
fabrication processes

Example : Top gate device